STTH12T06 Hoja de datos - STMicroelectronics

Description
This device is part of STs second generation of 600 V tandem diodes. It has ultralow switchinglosses with a minimized QRR (6.5 nC) that makes it perfect for use in circuits working in hardswitching mode. In particular the VF/QRR trade-off positions this device between standard ultrafast diodes and silicon-carbide Schottky rectifiers in terms of price/performance ratio.
The device offers a new positioning giving more flexibility to power-circuit designers looking for good performance while still respecting cost constraints.
Featuring STs Turbo 2 600 V technology, the device is particularly suited as a boost diode in continuous conduction mode power factor correction circuits.

FEATUREs
• High voltage rectifier
• Tandem diodes in series
• Very low switching losses
• Insulated device with internal ceramic
• Equal thermal conditions for both 300 V diodes
• Static and dynamic equilibrium of internal
   diodes are warranted by design
• Insulated package:
   – Capacitance: 7 pF
   – Insulated voltage: 2500 V rms