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Número de pieza
STPSC16H065C

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8 Pages

File Size
162.4 kB

Fabricante
ST-Microelectronics
STMicroelectronics 

Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimized capacitive charge at turn-off behavior is independent of temperature.
Especially suited for use in interleaved or bridgeless topologies, this dual-diode rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.


FEATUREs
• No or negligible reverse recovery
• Switching behavior independent of
   temperature
• High forward surge capability
• ECOPACK®2 compliant component


Número de pieza
componentes Descripción
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Fabricante
650 V power Schottky silicon carbide diode ( Rev : 2015 )
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650 V power Schottky silicon carbide diode ( Rev : 2014 )
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650 V power Schottky silicon carbide diode ( Rev : 2012 )
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650 V power Schottky silicon carbide diode ( Rev : 2012 )
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650 V power Schottky silicon carbide diode
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650 V power Schottky silicon carbide diode ( Rev : 2013 )
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650 V power Schottky silicon carbide diode
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