STP5N30L Hoja de datos - STMicroelectronics

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 1.25 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ CHOPPER REGULATORS, CONVERTERS,
   MOTOR CONTROL, LIGHTING FOR
   INDUSTRIAL AND CONSUMER
   ENVIRONMENT
■ PARTICULARLY SUITABLE FOR
   ELECTRONIC FLUORESCENT LAMP
   BALLASTS