STB13N60M2 Hoja de datos - STMicroelectronics

Description
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

FEATUREs
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected

APPLICATIONs
• Switching applications