NAND04GA3C2A Hoja de datos - STMicroelectronics

Summary description
The NAND04GA3C2A and NAND04GW3C2A are a Multi-level Cell(MLC) devices from the NAND Flash 2112 Byte Page family of non-volatile Flash memories. The devices are offered in 1.8V and 3V VDDQ I/O power supplies. The core voltage is 3V VDD. The size of a Page is 2112 Bytes (2048 + 64 spare).

FEATUREs
■ High density multi-level Cell (MLC) NAND Flash memories:
    – Up to 128 Mbit spare area
    – Cost effective solutions for mass storage applications
■ NAND interface
    – x8 bus width
    – Multiplexed Address/ Data
■ Supply voltages
    – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations.
    – VDDQ = 1.7 to 1.95 or 2.7 to 3.6V for I/O buffers.
■ Page size: (2048 + 64 spare) Bytes
■ Block size: (256K + 8K spare) Bytes
■ Page Read/Program
    – Random access: 60µs (max)
    – Sequential access: 60ns(min)
    – Page Program Operation time: 800µs (typ)
■ Cache Read mode
    – Internal Cache Register to improve the read throughput
■ Fast Block Erase
    – Block erase time: 1.5ms (typ)
■ Status Register
■ Electronic Signature
■ Serial Number option
■ Chip Enable ‘don’t care’
    – for simple interface with microcontroller
■ Data Protection
    – Hardware Program/Erase locked during power transitions
■ Embedded Error Correction Code (ECC)
    – Internal ECC accelerator
    – Easy ECC Command Interface
■ Data integrity
    – 10,000 Program/Erase cycles (with ECC)
    – 10 years Data Retention
■ ECOPACK® package available
■ Development tools
    – Bad Blocks Management and Wear Leveling algorithms
    – File System OS Native reference software
    – Hardware simulation models