N0400P-ZK-E1-AY Hoja de datos - Renesas Electronics

Description
The N0400P is P-channel MOS Field Effect Transistor designed for high current and 2.5 V drive switching applications.

FEATUREs
• 2.5 V drive available
• Super low on-state resistance
   RDS(on)1 = 40 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A)
   RDS(on)2 = 73 mΩ MAX. (VGS = −2.5 V, ID = −3.8 A)
• Built-in gate protection diode