MJD127(2009) Hoja de datos - STMicroelectronics

Description
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

FEATUREs
■ Low collector-emitter saturation voltage
■ Integrated antiparallel collector-emitter diode

APPLICATIONs
■ General purpose linear and switching