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2N6667 PDF
2N6667 Hoja de datos - Shenzhen SPTECH Microelectronics Co., Ltd.
Fabricante

Shenzhen SPTECH Microelectronics Co., Ltd.
DESCRIPTION
• High DC Current Gain- : hFE = 1000(Min)@ IC= -5A
• Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)
• Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -5A
• Complement to Type 2N6387
APPLICATIONS
• Designed for general purpose amplifier and low speed switching applications.
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Fabricante
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor