Part Name
W4N150
Other PDF
PDF
page
15 Pages
File Size
753 kB
MFG CO.
STMicroelectronics
W4N150(2009) Datasheet - STMicroelectronics
STMicroelectronics
Description
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
FEATUREs
■ 100% avalanche tested
■ Intrinsic capacitances and Qg minimized
■ High speed switching
■ Fully isolated TO-3PF plastic packages
■ Creepage distance path is 5.4 mm (typ.) for
TO-3PF
APPLICATION
■ Switching applications
Part Name
Description
View
MFG CO.
N-channel 1500 V, 6 ?, 2.5 A, PowerMESH? Power MOSFET in TO-220, TO-247, TO-3PF ( Rev : 2010 )
STMicroelectronics
N-channel 1500 V, 6 ?, 2.5 A, PowerMESH? Power MOSFET TO-220, TO-220FH, TO-247, TO-3PF
STMicroelectronics
N-channel 1200 V, 1.95 ? typ., 6 A SuperMESH3? Power MOSFET in TO-3PF, TO-220 and TO-247 packages
STMicroelectronics
N-channel 650 V, 0.049 ?, 46 A MDmesh? V Power MOSFET in TO-247, TO-3PF
STMicroelectronics
N-channel Enhanced mode TO-263/TO-220/TO-247 MOSFET
Xian Semipower Electronic Technology Co., Ltd.
N-channel 1500 V, 2.5 A, 6 ? typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages ( Rev : 2020 )
STMicroelectronics
N-channel 650 V, 35 A, 0.067 ? typ., MDmesh? V Power MOSFETs in TO-3PF, TO-247 and TO-247 long leads packages
STMicroelectronics
N-channel 1050 V, 8 ? typ., 1.4 A SuperMESH3? Power MOSFET in TO-220FP, TO-3PF and TO-220 packages
STMicroelectronics
Share Link: 