VT1060C-M3 Datasheet - Vishay Semiconductors
MFG CO.

Vishay Semiconductors
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPCIAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
Part Name
Description
View
MFG CO.
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2017 )
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2017 )
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2013 )
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2015 )
Vishay Semiconductors