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VT10200C-E3 Datasheet - Vishay Semiconductors

VBT10200C-E3 image

Part Name
VT10200C-E3

Other PDF
  2018  

PDF
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page
5 Pages

File Size
145.1 kB

MFG CO.
VISHAYSEMICONDUCTOR
Vishay Semiconductors 

FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package)
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS
    For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.

Page Link's: 1  2  3  4  5 

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PDF
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
Trench MOS Barrier Schottky Rectifier
PDF
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
Trench MOS Barrier Schottky Rectifier
PDF
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
Trench MOS Barrier Schottky Rectifier
PDF
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
Trench MOS Barrier Schottky Rectifier
PDF
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

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