VB40M120C(2022) Datasheet - Vishay Semiconductors

Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.46 V at IF = 5 A

FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
   LF maximum peak of 245 °C
• Material categorization: for definitions of compliance
   please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS
   For use in solar cell junction box as a bypass diode for
   protection, using DC forward current without reverse bias.