VB40120C Datasheet - Vishay Semiconductors

Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.43 V at IF = 5 A

FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
   peak of 245 °C (for D2PAK (TO-263AB) package)
• Solder bath temperature 275 °C maximum, 10 s,
   per JESD 22-B106 (for TO-220AB, ITO-220AB
   and TO-262AA package)
• Material categorization: for definitions of compliance
   please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS
   For use in high frequency converters, switching power
   supplies, freewheeling diodes, OR-ing diode, DC/DC
   converters and reverse battery protection.