VB40100C-M3 Datasheet - Vishay Semiconductors
MFG CO.

Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.38 V at IF = 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified available:
- Automotive ordering code P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
Part Name
Description
View
MFG CO.
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2017 )
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2017 )
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2013 )
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2015 )
Vishay Semiconductors