VB10150C Datasheet - Vishay Semiconductors
MFG CO.

Vishay Semiconductors
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
Part Name
Description
View
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45 V, 3 A low VF Trench MEGA Schottky barrier rectifier
Nexperia B.V. All rights reserved
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Nexperia B.V. All rights reserved
40 V, 3 A low VF Trench MEGA Schottky barrier rectifier
( Rev : 2023 )
Nexperia B.V. All rights reserved
Trench MOS Barrier Schottky Rectifier, Low VF Low IR
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
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DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
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( Rev : 2023 )
Nexperia B.V. All rights reserved