TSM6N50CPRO(V_B11) Datasheet - TSC Corporation

General Description
   The TSM6N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

FEATUREs
● Low RDS(ON) 1.4Ω (Max.)
● Low gate charge typical @ 25nC (Typ.)
● Low Crss typical @ 15pF (Typ.)
● Fast Switching