TSM2N7002(2003) Datasheet - TSC Corporation

VDS = 60V
RDS (on), Vgs @ 10V, Ids @ 500mA = 7.5Ω
RDS (on), Vgs @ 5V, Ids @ 50mA = 13.5Ω

FEATUREs
✧ Advanced trench process technology
✧ High density cell design for low on-resistance
✧ High input impedance
✧ High speed switching
✧ No minority carrier storage time
✧ CMOS logic compatible input
✧ No secondary breakdown
✧ Compact and low profile SOT-23 package