TSM1NB60(V_A12) Datasheet - TSC Corporation

General Description
   The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

FEATUREs
● Low RDS(ON) 8Ω (Typ.)
● Low gate charge typical @ 6.1nC (Typ.)
● Low Crss typical @ 4.2pF (Typ.)