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STW80N06-10
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MFG CO.
STMicroelectronics
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STW80N06-10 Datasheet - STMicroelectronics
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
■ TYPICAL RDS(on) = 0.0085 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ HIGH CURRENT CAPABILITY
■ 175oC OPERATING TEMPERATURE
■ HIGH dV/dt RUGGEDNESS
■ APPLICATION ORIENTED CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ POWER MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
■ SYNCRONOUS RECTIFICATION
Part Name
Description
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MFG CO.
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE ?ULTRA HIGH DENSITY? POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE ?ULTRA HIGH DENSITY? POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE ?ULTRA HIGH DENSITY? POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE "SINGLE FEATURE SIZE" POWER MOSFET ( Rev : 1997 )
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE "SINGLE FEATURE SIZE" POWER MOSFET
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE? " POWER MOSFET
STMicroelectronics
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