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STW48N60M2-4(2017) Datasheet - STMicroelectronics

STW48N60M2-4 image

Part Name
STW48N60M2-4

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12 Pages

File Size
707.1 kB

MFG CO.
ST-Microelectronics
STMicroelectronics 

Description
This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.


FEATUREs
• Excellent switching performance thanks to
   the extra driving source pin
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected


APPLICATIONs
• High efficiency switching applications:
   ― Servers
   ― PV inverters
   ― Telecom infrastructure
   ― Multi kW battery chargers


Part Name
Description
View
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N-channel 650 V, 0.037 ? typ., 58 A, MDmesh? V Power MOSFET in a TO247-4 package
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N-channel 600 V, 0.55 ? typ., 7.5 A MDmesh? M2 Power MOSFET in a TO-220FP package
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N-channel 600 V, 0.340 ? typ., 11 A MDmesh? M2 EP Power MOSFET in a DPAK package ( Rev : 2018 )
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N-channel 650 V, 0.073 ? typ., 30 A MDmesh M5 Power MOSFET in a TO247-4 package
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