Description
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
FEATUREs
■ Extremely high dv/dt capability
■ Improved esd capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing reliability
APPLICATIONs
■ Switching applications
Part Name
Description
View
MFG CO.
N-channel 800 V, 0.19 ? typ., 19.5 A SuperMESH?5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages ( Rev : 2013 )
STMicroelectronics
N-channel 800 V, 0.3 ? typ., 14 A SuperMESH? 5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages ( Rev : 2012 )
STMicroelectronics
N-channel 950 V, 0.65 ? typ., 8 A Zener-protected SuperMESH? 5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247
STMicroelectronics
N-channel 900 V, 0.25 ? typ., 18.5 A Zener-protected SuperMESH? 5 Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 800 V, 0.3 ? typ., 14 A MDmesh? K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 800 V, 0.19 ? typ., 19.5 A MDmesh? K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 900 V, 1.1 ?, 8 A, TO-220, TO-220FP, D2PAK, TO-247 Zener-protected SuperMESH? Power MOSFET ( Rev : 2010 )
STMicroelectronics
N-channel 950 V, 0.68 ? typ., 10 A Zener-protected SuperMESH3? Power MOSFET in TO-220FP, I2PAKFP, TO-220 and TO-247
STMicroelectronics
N-channel 900V - 1.56? - 5.8A - TO-220/TO-220FP/D2PAK/TO-247 Zener-protected SuperMESH? Power MOSFET ( Rev : 2007 )
STMicroelectronics
N-channel 600 V, 0.48 ?, 13 A, TO-220, TO-220FP, D2PAK TO-247 Zener-protected SuperMESH? Power MOSFET
STMicroelectronics