STV160NF02L(1999) Datasheet - STMicroelectronics

DESCRIPTION
The STV160NF02L represents the second generation of Application Specific STMicroelectronics well established STripFET process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics. Process simplification also translates into improved manufacturing reproducibility. This device is particularly suitable for high current, low voltage switching application where efficiency is crucial.

■ TYPICAL RDS(on) = 0.0016 Ω
■ ULTRA LOW ON-RESISTANCE
■ ULTRA FAST SWITCHING
■ 100% AVALANCHE TESTED
■ VERY LOW GATE CHARGE
■ LOW THRESHOLD DRIVE
■ LOW PROFILE, VERY LOW PARASITIC INDUCTANCE PowerSO-10 PACKAGE

APPLICATIONS
■ BUCK CONVERTERS IN HIGH PERFORMACE TELECOM AND VRMs DC-DC CONVERTERS