STU9NC80Z Datasheet - STMicroelectronics

DESCRIPTION
   The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.

■ TYPICAL RDS(on) = 0.82Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ GATE-TO-SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS,
   COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT