STSJ80N4LLF3 Datasheet - STMicroelectronics

Description
   This series of product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This process coupled to unique metallization techniques realizes the most advanced low voltage Power MOSFET in SO-8 ever produced. The exposed slug reduces the Rthj-c improving the current capability.

General features
■ Optimal RDS(on) x Qg trade-off @ 4.5V
■ Switching losses reduced
■ Low threshold device
■ Improved junction-case thermal resistance

APPLICATIONs
■ Switching application