STS9NF30L(2002) Datasheet - STMicroelectronics

DESCRIPTION
This application specific Power MOSFET is the second generation of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.

■ TYPICAL RDS(on) = 0.020 Ω @ 5 V
■ TYPICAL Qg = 9.5 nC @ 4.5 V
■ OPTIMAL RDS(on) x Qg TRADE-OFF
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED

APPLICATIONS
■ SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCS