STPSC40H12C-Y Datasheet - STMicroelectronics

Description
The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.

FEATUREs
• AEC-Q101 qualified
• No or negligible reverse recovery
• Switching behavior independent of temperature
• Robust high-voltage periphery
• PPAP capable
• Operating Tj from -40 °C to 175 °C
• ECOPACK2 compliant

APPLICATIONs
• OBC (On Board Battery chargers)
• PHEV - EV charging stations
• Resonant LLC topology
• PFC functions (Power Factor Corrector)