STP4N150(2006) Datasheet - STMicroelectronics

Description
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.

FEATUREs
■ Avalanche ruggedness
■ Gate charge minimized
■ Very low intrinsic capacitances
■ High speed switching

APPLICATIONs
■ Switching application