Description
This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Features
■ Exceptional dv/dt capability
■ Low gate charge at 100°C
■ Application oriented characterization
■ 100% avalanche tested
Application
■ Switching applications
Part Name
Description
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MFG CO.
N-channel 500 V, 0.11 ?, 22 A MDmesh? II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
STMicroelectronics
MOSFET ? N-Channel, SUPERFET II 600 V, 22 A, 170 m?
ON Semiconductor
N-channel 68 V, 0.010 ?, 80 A, TO-220 STripFET? II Power MOSFET
STMicroelectronics
N-channel 68 V, 0.0082 ?, 98 A, TO-220 STripFET? II Power MOSFET
STMicroelectronics
N-channel 55 V, 0.0060?, 80 A, TO-220, D2PAK STripFET? II Power MOSFET
STMicroelectronics
N-channel 60 V, 0.023 ?, 38 A TO-220, D2PAK STripFETTM II Power MOSFET ( Rev : 2010 )
STMicroelectronics
N-channel 500 V, 0.1 ? typ., 22 A MDmesh? II Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 packages
STMicroelectronics
N-Channel SuperFET II MOSFET 600 V, 22 A, 170 m?
Fairchild Semiconductor
N-Channel SuperFET II MOSFET 600 V, 22 A, 170 m?
Fairchild Semiconductor
N-channel 30 V, 0.018 ?, 40 A TO-220, TO-220FP STripFET? Power MOSFET
STMicroelectronics