Part Name
STP150N10F7AG
Description
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MFG CO.
STMicroelectronics
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STP150N10F7AG Datasheet - STMicroelectronics
STMicroelectronics
Description
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
FEATUREs
• Designed for automotive application
• Standard level VGS(TH)
• 175°C junction temperature
• 100% avalanche rated
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
N-channel 100 V, 2.85 m? typ., 110 A STripFET? F7 Power MOSFET in a TO-220 package
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N-channel 60 V, 4.2 m? typ., 80 A STripFET? F7 Power MOSFET in a TO-220 package
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N-channel 100 V, 0.02 ? typ., 32 A STripFET? F7 Power MOSFET in a TO-220 package
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N-channel 60 V, 4.7 m? typ.,100 A STripFET? F7 Power MOSFET in a TO-220 package
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N-channel 60 V, 4.2 m? typ., 80 A STripFET? F7 Power MOSFET in a DPAK package
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N-channel 100 V, 0.0034 ? typ., 110 A, STripFET? F7 Power MOSFET in a H2PAK-2 package
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N-channel 60 V, 0.0031 ? typ., 80 A STripFET? F7 Power MOSFET in a TO-220 package
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N-channel 40 V, 1.8 m? typ., 120 A STripFET? F7 Power MOSFET in a TO-220 package
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N-channel 80 V, 3.5 m? typ., 90 A STripFET? F7 Power MOSFET in a TO-220 package
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N-channel 100 V, 0.0036 ? typ., 110 A, STripFET? F7 Power MOSFETs in I2PAK and TO-220 packages
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