Description
These N-channel Power MOSFETs are developed using STMicroelectronics revolutionary MDmesh™ technology, which associates the multiple drain process with the companys PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing STs proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
FEATUREs
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Best RDS(on)*Qg in the industry
APPLICATIONs
■ Switching applications
Part Name
Description
View
MFG CO.
N-channel 650 V, 0.095 ?, 24 A, MDmesh? V Power MOSFET in DPAK, IPAK, TO-220FP, TO-220, TO-247
STMicroelectronics
N-channel 650 V, 0.085 ?, 27 A, MDmesh? V Power MOSFET in DPAK, TO-220FP, IPAK, TO-220, TO-247
STMicroelectronics
N-channel 650 V, 0.150 ?, 17 A MDmesh? V Power MOSFET DPAK, TO-220FP, TO-220, IPAK, TO-247
STMicroelectronics
N-channel 800 V, 0.25 ?, 17 A, MDmesh? Power MOSFET in DPAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 650 V, 0.125 ?, 22 A, MDmesh? V Power MOSFET DPAK, TO-220FP, IPAK, TO-220, TO-247
STMicroelectronics
N-channel 600 V, 0.27 ?, 13 A MDmesh? II Power MOSFET in TO-220, TO-220FP, TO-247, DPAK and IPAK
STMicroelectronics
N-channel TO-220/I-PAK/D-PAK/TO-220F MOSFET ( Rev : 2014 )
Xian Semipower Electronic Technology Co., Ltd.
N-channel TO-220/I-PAK/D-PAK/TO-220F MOSFET ( Rev : 2014 )
Xian Semipower Electronic Technology Co., Ltd.
N-channel TO-220/I-PAK/D-PAK/TO-220F MOSFET
Xian Semipower Electronic Technology Co., Ltd.
N-channel 800 V, 0.37 ? typ., 12 A MDmesh? K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247
STMicroelectronics