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STP11NM50N Datasheet - STMicroelectronics

STP11NM50N image

Part Name
STP11NM50N

Other PDF
  2015  

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page
16 Pages

File Size
634.1 kB

MFG CO.
ST-Microelectronics
STMicroelectronics 

Description
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.


FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance


APPLICATION
    Switching applications

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Description
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