Description
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATION
Switching applications
Part Name
Description
View
MFG CO.
N-channel 500 V, 0.53 ?, 7 A DPAK, TO-220FP, TO-220 MDmesh? II Power MOSFET
STMicroelectronics
N-channel 500 V, 0.2 ?, 14 A MDmesh? II Power MOSFET in TO-220FP, TO-220 and TO-247 ( Rev : 2010 )
STMicroelectronics
N-channel 600 V, 0.63 ?, 6.5 A TO-220, TO-220FP, DPAK MDmesh? II Power MOSFET
STMicroelectronics
N-channel 650 V, 390 m? typ., 8.5 A MDmesh M5 Power MOSFET in a TO-220FP and TO-220 packages ( Rev : 2022 )
STMicroelectronics
N-channel 500 V, 0.2 ? typ., 14 A MDmesh? II Power MOSFETs in TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 500 V, 0.28 ? typ., 12 A MDmesh? II Power MOSFET in DPAK, DPAK, TO-220FP, IPAK and TO-220 packages
STMicroelectronics
N-channel 650 V, 0.425 ?typ., 11 A MDmesh?II Power MOSFET in DPAK, TO-220FP, IPAKFP and TO-220 packages
STMicroelectronics
N-channel 600 V, 0.53 ?, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh? II Power MOSFET
STMicroelectronics
N-channel 600 V, 0.63 ? typ., 6.5 A MDmesh? II Power MOSFETs in DPAK, TO-220FP and TO-220 packages ( Rev : 2018 )
STMicroelectronics
N-channel 250 V, 0.140 ? typ., 17 A STripFET? II Power MOSFETs in DPAK, TO-220FP and TO-220 packages ( Rev : 2018 )
STMicroelectronics