Part Name
STP10NM60N
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MFG CO.
STMicroelectronics
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STP10NM60N(2015) Datasheet - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
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N-channel 600 V, 4 ? typ., 2 A SuperMESH3? Power MOSFET in DPAK, TO-220FP and IPAK packages
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N-channel 525 V, 2.5 A, 2.1 ? typ., SuperMESH3? Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
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N-channel 600 V, 0.37 ?, 10 A, FDmesh? II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
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N-channel 600 V, 3.2 ? typ., 2.4 A SuperMESH? Power MOSFETs in DPAK, IPAK, DPAK, TO-220 and TO-220FP packages ( Rev : 2018 )
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N-channel 600 V, 0.28 ? typ., 11 A MDmesh? II Power MOSFET in TO-220FP, IPAK, TO-220, IPAK, TO-247 packages
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N-channel 600 V, 0.32 ? typ., 11 A, FDmesh? II Power MOSFET (with fast diode) in DPAK, TO-220FP and TO-220 packages
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