STN2NE06 Datasheet - STMicroelectronics

DESCRIPTION
This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™ stip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.18 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ AVALANCHE RUGGED TECHNOLOGY
■ 100 % AVALANCHE TESTED
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ DC MOTOR CONTROL (DISK DRIVES,etc.)
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION