STK22N06 Datasheet - STMicroelectronics

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on)= 0.048Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ 175°C OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION