Part Name
STH140N8F7-2
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MFG CO.
STMicroelectronics
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STH140N8F7-2 Datasheet - STMicroelectronics
STMicroelectronics
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
FEATUREs
• Among the lowest RDS(on) on the market
• Excellent figure of merit (FoM)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
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N-channel 60 V, 3.1 m? typ., 80 A STripFET? F7 Power MOSFET in a DPAK package ( Rev : 2016 )
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N-channel 80 V, 0.0028 ? typ., 120 A, STripFET? F7 Power MOSFET in a HPAK-2 package
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N-channel 40 V, 1.95 m? typ., 90 A, STripFET? F7 Power MOSFET in a TO-220FP package
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