STGD3HF60HD Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
Description
These devices are based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses.
FEATUREs
• Minimal tail current
• Low conduction and switching losses
• Ultrafast soft recovery antiparallel diode
APPLICATIONs
• Motor drive
Part Name
Description
View
MFG CO.
31 A, 600 V, very fast IGBT with Ultrafast diode
STMicroelectronics
17 A, 600 V fast IGBT with Ultrafast diode
STMicroelectronics
20 A, 600 V fast IGBT with Ultrafast diode
STMicroelectronics
40 A - 600 V - very fast IGBT
STMicroelectronics
7 A, 1200 V very fast IGBT with ultrafast diode
STMicroelectronics
10 A, 600 V fast IGBT
STMicroelectronics
IGBT 600 A 600 V
Nihon Inter Electronics
33 A - 1300 V - very fast IGBT
STMicroelectronics
30 A, 600 V, Ultrafast Diode
ON Semiconductor
15 A, 600 V, Ultrafast Diode
ON Semiconductor