STGAP1AS(2016) Datasheet - STMicroelectronics

Description

   The STGAP1AS gapDRIVE™ is a galvanically isolated single gate driver for N-channel MOSFETs and IGBTs with advanced protection, configuration and diagnostic features. The architecture of the STGAP1AS isolates the channel from the control and the low voltage interface circuitry through true galvanic isolation. The gate driver is characterized by 5 A capability, making the device also suitable for high power inverter applications such as motor drivers in hybrid and electric vehicles and in industrial drives. The output driver section provides a railto-rail output with the possibility to use a negative gate driver supply. 

Features

• Qualified for automotive

   applications according to AEC-Q100

• High voltage rail up to 1500 V

• Driver current capability: 5 A sink/source

   current at 25 °C

• dV/dt transient immunity ± 50 V/ns in full

   temperature range

• Overall input/output propagation delay: 100 ns

• Separate sink and source for easy gate driving

   configuration

• Negative gate drive ability

• Active Miller clamp

• Desaturation detection

• SENSE input

• VCE active clamping

• Output 2-level turn-off

• Diagnostic status output

• UVLO and OVLO functions

• Programmable input deglitch filter

• Asynchronous stop command

• Programmable deadtime, with violation error

• SPI interface for parameters programming

• Temperature warning and shutdown protection

• Self-diagnostic routines for protection features

• Full effective fault protection

Applications

• 600/1200 V inverters

• Inverters for EVHEV

• EV charging stations

• Industrial drives

• UPS equipment

• DC/DC converters

• Solar inverters