Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
FEATUREs
• Industry’s lowest RDS(on)
• Industry’s best figure of merit (FoM)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
N-channel 800 V, 0.95 ? typ., 6 A MDmesh? K5 Power MOSFETs in TO-220FP and IPAKFP packages
STMicroelectronics
N-channel 800 V, 1.3 ? typ., 4.5 A MDmesh K5 Power MOSFETs in DPAK, DPAK, IPAK and TO-220 packages ( Rev : 2021 )
STMicroelectronics
N-channel 800 V, 1.3 ? typ., 4.5 A MDmesh? K5 Power MOSFETs in DPAK, DPAK, IPAK and TO-220 packages ( Rev : 2015 )
STMicroelectronics
N-channel 800 V, 1.3 ? typ., 4.5 A MDmesh? K5 Power MOSFETs in DPAK, DPAK, IPAK and TO-220 packages
STMicroelectronics
N-channel 800 V, 0.3 ? typ., 14 A MDmesh? K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 800 V, 2.1 ? typ., 3 A MDmesh? K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 800 V, 0.19 ? typ., 19.5 A MDmesh? K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 800 V, 3.5 ? typ., 2 A MDmesh? K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 1200 V, 0.62 ? typ., 12 A MDmesh? K5 Power MOSFETs in TO-220FP and TO-3PF packages
STMicroelectronics
N-channel 800 V, 0.470 ? typ., 9 A MDmesh? K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads
STMicroelectronics