Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
FEATUREs
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
APPLICATIONs
■ Switching applications
Part Name
Description
View
MFG CO.
N-channel 620 V, 0.95 ? typ., 5.5 A SuperMESH3? Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220, IPAK packages
STATEK CORPORATION
N-channel 620 V, 1.7 ? typ., 3.8 A SuperMESH3? Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220 and IPAK packages
STMicroelectronics
N-channel 620 V, 0.68 ? typ., 8.4 A SuperMESH3? Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220 packages
STMicroelectronics
N-channel 620 V, 1.28 ? typ., 4.2 A MDmesh? K3 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages ( Rev : 2018 )
STMicroelectronics
N-channel 800 V, 0.95 ? typ., 6.5 A MDmesh? II Power MOSFETs in DPAK, IPAK, TO-220FP and TO-220 packages
STMicroelectronics
N-channel 600 V, 0.28 ? typ., 11 A MDmesh? II Power MOSFET in TO-220FP, IPAK, TO-220, IPAK, TO-247 packages
STMicroelectronics
N-channel 600 V, 280 m? typ., 11 A MDmesh II Power MOSFETs in a TO-220FP, IPAK, TO-220 and IPAK packages ( Rev : 2020 )
STMicroelectronics
N-channel 650 V, 0.56 ? typ., 7 A MDmesh? V Power MOSFET in DPAK, IPAK, TO-220, TO-220FP, DPAK and IPAK packages ( Rev : 2012 )
STMicroelectronics
N-channel 800 V, 0.95 ? typ., 6 A MDmesh? K5 Power MOSFETs in TO-220FP and IPAKFP packages
STMicroelectronics
N-channel 100 V, 7.8 m? typ., 120 A STripFET?III Power MOSFET in TO-220FP, IPAKFP, HPAK-2 and TO-220 packages
STMicroelectronics