Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
FEATUREs
■ Worldwide best RDS(on)
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
APPLICATIONs
■ Switching applications
Part Name
Description
View
MFG CO.
N-channel 650 V, 0.095 ?, 24 A, MDmesh? V Power MOSFET in DPAK, IPAK, TO-220FP, TO-220, TO-247
STMicroelectronics
N-channel 650 V, 0.085 ?, 27 A, MDmesh? V Power MOSFET in DPAK, TO-220FP, IPAK, TO-220, TO-247
STMicroelectronics
N-channel 650 V, 0.150 ?, 17 A MDmesh? V Power MOSFET DPAK, TO-220FP, TO-220, IPAK, TO-247
STMicroelectronics
N-channel 650 V, 0.125 ?, 22 A, MDmesh? V Power MOSFET DPAK, TO-220FP, IPAK, TO-220, TO-247
STMicroelectronics
N-channel 650 V, 0.198 ? typ., 15 A MDmesh? V Power MOSFET in TO-220FP, IPAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 650 V, 0.56 ?, 7 A MDmesh? V Power MOSFET in DPAK, IPAK, TO-220, TO-220FP, DPAK and IPAK
STMicroelectronics
N-channel 650 V, 0.33 ?, 12 A MDmesh? II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247
STMicroelectronics
N-channel 800 V, 0.35 ?, 11 A MDmesh? Power MOSFET in DPAK, TO-220FP, IPAK, TO-220, TO-247
STMicroelectronics
N-channel 650 V, 0.073 ?, 30 A MDmesh? V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.28 ? typ., 11 A MDmesh? II Power MOSFET in TO-220FP, IPAK, TO-220, IPAK, TO-247 packages
STMicroelectronics