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STF11N50M2 Datasheet - STMicroelectronics

STF11N50M2 image

Part Name
STF11N50M2

Other PDF
  2014  

PDF
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page
22 Pages

File Size
752.4 kB

MFG CO.
ST-Microelectronics
STMicroelectronics 

Description
These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.


FEATUREs
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected


APPLICATIONs
• Switching applications


Part Name
Description
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N-channel 600 V, 0.078 ? typ., 34 A MDmesh M2 Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages
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N-channel 1000 V, 5.4 ? typ., 2.5 A SuperMESH? Power MOSFETs in DPAK and TO-220FP packages ( Rev : 2018 )
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N-channel 600 V, 1.06 ? typ., 4.5 A MDmesh? M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages
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N-channel 600 V, 0.14 ? typ., 20 A MDmesh? M2 Power MOSFETs in TO-220FP and IPAKFP packages
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N-channel 600 V, 0.108 ? typ., 26 A, MDmesh M2 Power MOSFETs in TO?220FP, I2PAK, TO-220 and TO-247 packages
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N-channel 650 V, 1.2 ? typ., 4 A MDmesh? M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages
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