STD8N10L Datasheet - STMicroelectronics

N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

■ TYPICAL RDS(on)= 0.25 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
■ LOW INPUT CAPACITANCE
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ 175°C OPEARTING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1")
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") 

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)