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STD45N10F7 Datasheet - STMicroelectronics

STP45N10F7 image

Part Name
STD45N10F7

Other PDF
  2013  

PDF
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page
20 Pages

File Size
1.2 MB

MFG CO.
ST-Microelectronics
STMicroelectronics 

Description
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.


FEATUREs
• Among the lowest RDS(on) on the market
• Excellent figure of merit (FoM)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness


APPLICATIONs
• Switching applications


Part Name
Description
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