STD16NE10 Datasheet - STMicroelectronics

DESCRIPTION
This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process.The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.

■ TYPICAL RDS(on) = 0.07 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ AVALANCHERUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ APPLICATION ORIENTED CHARACTERIZATION
■ THROUG-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)

APPLICATIONS
■ DC MOTOR CONTROL (DISK DRIVERS,etc.)
■ DC-DC & DC-ACCONVERTERS
■ SYNCHRONOUS RECTIFICATION