STC08IE120HV Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
Description
The STC08IE120HV is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications.
It is designed for use in Gate Driven based topologies.
General features
■ High voltage / high current Cascode configuration
■ Low equivalent on resistance
■ very fast-switch up to 150 kHz
■ Squared RBSOA up to 1200V
■ Very low Ciss driven by RG = 47Ω
■ Very low turn-off cross over time
APPLICATIONs
■ Flyback / forward SMPS
■ Sepic PFC
Part Name
Description
View
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Monolithic Emitter Switched Bipolar Transistor ESBT 1200 V - 70 A - 0.014 ? Power Module
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Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12 ?
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Emitter Switched Bipolar Transistor ESBT 900 V - 12 A - 0.083 ?
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Emitter Switched Bipolar Transistor ESBT 900 V - 12 A - 0.083 ?
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Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12 ?
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Hybrid emitter switched bipolar transistor ESBT 900 V - 20 A - 0.06 ?
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