Part Name
STB6N60M2
Description
Other PDF
no available.
PDF
page
19 Pages
File Size
1.1 MB
MFG CO.
STMicroelectronics
STB6N60M2 Datasheet - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
FEATUREs
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
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N-channel 600 V, 1.06 ? typ., 4.5 A MDmesh? M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages
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N-channel 600 V, 0.168 ? typ., 18 A MDmesh II Plus? low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages
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N-channel 600 V, 0.168 ? typ., 18 A MDmesh II Plus? low Qg Power MOSFET in TO-220FP and I2PAKFP packages
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N-channel 600 V, 0.168 ? typ., 18 A MDmesh II Plus? low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages ( Rev : 2014 )
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N-channel 600 V, 0.078 ? typ., 34 A MDmesh II Plus? low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages ( Rev : 2014 )
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N-channel 650 V, 0.308 ? typ., 11 A MDmesh? V Power MOSFET in D2PAK and DPAK packages
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