STB6LNC60 Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
DESCRIPTION
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.
■ TYPICAL RDS(on) = 1.0 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES
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Part Name
Description
View
MFG CO.
N-CHANNEL 600V - 1.8? - 4.2A D2PAK PowerMesh?II MOSFET
STMicroelectronics
N - CHANNEL 900V - 1.7? - 5.8A - D2PAK PowerMESH? MOSFET
STMicroelectronics
N-CHANNEL 600V - 1? - 5.8A TO-220/TO-220FP PowerMesh?II MOSFET
STMicroelectronics
N-CHANNEL 600V - 0.6? - 9A - D2PAK/I2PAK PowerMesh?II MOSFET
STMicroelectronics
N - CHANNEL 500V - 1.35? - 5.8A - D2PAK/I2PAK PowerMESH? MOSFET
STMicroelectronics
5.8A,700V N-CHANNEL MOSFET
KIA Semiconductor Technology
200V, 5.8A N-Channel MOSFET
Alpha and Omega Semiconductor
30V, 5.8A N-channel Trench MOSFET
Kodenshi Auk Co., LTD
N-CHANNEL 500V - 0.7? - 8A D2PAK PowerMesh?II MOSFET
STMicroelectronics
N-Channel UniFET? II MOSFET 600V, 10A, 750m?
Fairchild Semiconductor