STB60NE06L-16 Datasheet - STMicroelectronics

DESCRIPTION
This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.014 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ 175 °C OPERATING TEMPERATURE
■ LOW THRESHOLD DRIVE
■ FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT