STB50NE10 Datasheet - STMicroelectronics

Description
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

General features
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Low gate charge at 100 °C
■ Application oriented characterization

APPLICATIONs
■ Switching application