STB40NS15T4 Datasheet - STMicroelectronics

Description
This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.

FEATUREs
■ Exceptional dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances

APPLICATIONs
■ Switching application